1980年前(qian)，我國(guo)半導體產(chan)業已(yi)經形(xing)成較(jiao)完整的(de)包括設(she)備、原(yuan)料(liao)、制造、工藝等方面的(de)科(ke)研和(he)生產(chan)體系，主要分布于原(yuan)電(dian)子部(bu)（信息(xi)產(chan)業部(bu)）、中國(guo)科(ke)學院和(he)航天(tian)部(bu)系統。

改革(ge)開放以來，經(jing)過(guo)大(da)規(gui)(gui)(gui)模(mo)(mo)引進消化和90年代(dai)的(de)重點(dian)建設，目前我國半導體(ti)(ti)產業已(yi)具備(bei)了(le)一定(ding)的(de)規(gui)(gui)(gui)模(mo)(mo)和基(ji)礎(chu)，包括已(yi)穩定(ding)生(sheng)產的(de)7個(ge)芯片生(sheng)產骨干(gan)廠(chang)、20多個(ge)封裝企業，幾十家具有(you)規(gui)(gui)(gui)模(mo)(mo)的(de)設計企業以及若干(gan)個(ge)關鍵材料及專用設備(bei)儀器制造廠(chang)組成的(de)產業群體(ti)(ti)，大(da)體(ti)(ti)集中于京津(jin)、滬蘇浙、粵閩(min)三地。

我(wo)國(guo)(guo)歷年(nian)對半導(dao)體(ti)產(chan)業(ye)(ye)的總(zong)(zong)投入約260億元人民幣（含126億元外資）。現有集(ji)成(cheng)(cheng)電(dian)路(lu)(lu)生產(chan)技(ji)術主要來源于(yu)國(guo)(guo)外技(ji)術轉讓，其中相當(dang)部分集(ji)成(cheng)(cheng)電(dian)路(lu)(lu)前道工序和(he)封裝廠是(shi)與美、日、韓(han)公司合資設立。其中三(san)資企(qi)業(ye)(ye)的銷(xiao)售(shou)額約占總(zong)(zong)銷(xiao)售(shou)額的88%（1998年(nian)）。民營的集(ji)成(cheng)(cheng)電(dian)路(lu)(lu)企(qi)業(ye)(ye)開始萌芽。

設(she)(she)(she)計(ji)：集成(cheng)(cheng)電路(lu)(lu)的(de)(de)(de)設(she)(she)(she)計(ji)匯集電路(lu)(lu)、器件、物理(li)、工藝、算法、系統等(deng)不同技術領域的(de)(de)(de)背景，是(shi)最尖端的(de)(de)(de)技術之一。我國(guo)目前以(yi)各種(zhong)形(xing)態(tai)存在的(de)(de)(de)集成(cheng)(cheng)電路(lu)(lu)設(she)(she)(she)計(ji)公司(si)、設(she)(she)(she)計(ji)中心(xin)等(deng)約(yue)80個，工程師隊伍還不足3000人。2000年，集成(cheng)(cheng)電路(lu)(lu)設(she)(she)(she)計(ji)業銷售額超(chao)(chao)過(guo)(guo)300萬元的(de)(de)(de)企(qi)業有(you)20多家(jia)(jia)，其中超(chao)(chao)過(guo)(guo)1000萬的(de)(de)(de)約(yue)10家(jia)(jia)。超(chao)(chao)過(guo)(guo)1億的(de)(de)(de)4家(jia)(jia)（華大(da)、矽科、大(da)唐微電子和士蘭(lan)公司(si)）。總(zong)銷售額10億元左右(you)。年平(ping)均設(she)(she)(she)計(ji)300種(zhong)左右(you)（其中不到200種(zhong)形(xing)成(cheng)(cheng)批量(liang)）。

現主(zhu)要利用外商提供的EDA工具，運用門陣列、標準單元，全定制(zhi)等多(duo)種方法(fa)進行設計(ji)(ji)(ji)(ji)。并開(kai)(kai)始采用基于機構級的高(gao)層次(ci)設計(ji)(ji)(ji)(ji)技術、VHDL，和可測性設計(ji)(ji)(ji)(ji)技術等先(xian)進設計(ji)(ji)(ji)(ji)方法(fa)。設計(ji)(ji)(ji)(ji)最(zui)高(gao)水平為(wei)0.25微(wei)米，700萬元件(jian)(jian)，3層金(jin)屬(shu)布(bu)線，主(zhu)線設計(ji)(ji)(ji)(ji)線寬0.8-1.5微(wei)米，雙(shuang)層布(bu)線。[1]目(mu)前，我國在(zai)通信類集成(cheng)電(dian)(dian)路(lu)(lu)設計(ji)(ji)(ji)(ji)有一定的突破。自(zi)行設計(ji)(ji)(ji)(ji)開(kai)(kai)發(fa)(fa)的熊貓2000系列CAD軟件(jian)(jian)系統已開(kai)(kai)發(fa)(fa)成(cheng)功(gong)并正在(zai)推廣(guang)。這個(ge)系統的開(kai)(kai)發(fa)(fa)成(cheng)功(gong)，使我國繼美國、歐共體(ti)、日(ri)本之后，第四個(ge)成(cheng)為(wei)能夠開(kai)(kai)發(fa)(fa)大型的集成(cheng)電(dian)(dian)路(lu)(lu)設計(ji)(ji)(ji)(ji)軟件(jian)(jian)系統的國家(jia)。目(mu)前邏輯電(dian)(dian)路(lu)(lu)、數字電(dian)(dian)路(lu)(lu)100萬門左右(you)的產品(pin)已可以用此設計(ji)(ji)(ji)(ji)。

前工序(xu)制(zhi)造：1990年代(dai)以來，國家通過(guo)投資(zi)實施(shi)“908”、“909”工程，形(xing)成了國家控股(gu)的骨干生產(chan)企業。其中，中日合資(zi)、中方控股(gu)的華(hua)虹NEC（8英寸硅片(pian)(pian)，0.35-0.25微米，月(yue)投片(pian)(pian)2萬片(pian)(pian)），總(zong)投資(zi)10億美元，以18個月(yue)的國際標準速度建成，99年9月(yue)試投片(pian)(pian)，現已達產(chan)。該工程使我國芯片(pian)(pian)制(zhi)造進入(ru)世界主流技術(shu)水平，增強了國內(nei)外產(chan)業界對我國半導體產(chan)業能力(li)的信心。

1引言

功率(lv)(lv)模塊焊接(jie)和(he)(he)(he)連接(jie)的(de)(de)(de)(de)(de)最新技(ji)(ji)術水(shui)平(ping)是(shi)空白的(de)(de)(de)(de)(de)使(shi)用(yong)(yong)(yong)一(yi)一(yi)半(ban)(ban)導(dao)體(ti)底(di)面(mian)(mian)與頂(ding)層(ceng)(ceng)基材和(he)(he)(he)鋁（A）粗(cu)(cu)線互連的(de)(de)(de)(de)(de)無鉛焊接(jie)工藝(yi)(yi)。由于(yu)(yu)設計(ji)靈活(huo)性大(da)、實(shi)現(xian)自動(dong)化(hua)的(de)(de)(de)(de)(de)程序簡單(dan)，鋁線綁(bang)定(ding)現(xian)在(zai)(zai)己成為(wei)頂(ding)層(ceng)(ceng)互連的(de)(de)(de)(de)(de)首選。遺憾的(de)(de)(de)(de)(de)是(shi)，由于(yu)(yu)眾所周知的(de)(de)(de)(de)(de)生命周期(qi)局(ju)限的(de)(de)(de)(de)(de)原因，鋁粗(cu)(cu)線焊接(jie)成了眾多設計(ji)的(de)(de)(de)(de)(de)瓶(ping)頸(jing)。過(guo)去(qu)，利用(yong)(yong)(yong)燒結(jie)帶或編織(zhi)帶提(ti)出(chu)了一(yi)些關于(yu)(yu)芯(xin)片頂(ding)層(ceng)(ceng)觸點(dian)的(de)(de)(de)(de)(de)解決方(fang)(fang)案對(dui)于(yu)(yu)1C或存儲產品而言，作(zuo)為(wei)粗(cu)(cu)金(jin)（Au）線的(de)(de)(de)(de)(de)替(ti)(ti)代品，銅(tong)（Cu）線綁(bang)定(ding)具有(you)較高(gao)的(de)(de)(de)(de)(de)適配率(lv)(lv)。還強烈希望采用(yong)(yong)(yong)較大(da)直徑的(de)(de)(de)(de)(de)電(dian)線作(zuo)為(wei)鋁線的(de)(de)(de)(de)(de)替(ti)(ti)代品，并提(ti)出(chu)了此課題的(de)(de)(de)(de)(de)有(you)關事項PM。銅(tong)線綁(bang)定(ding)保持(chi)了當前鋁線綁(bang)定(ding)法的(de)(de)(de)(de)(de)設計(ji)靈活(huo)性和(he)(he)(he)工藝(yi)(yi)靈活(huo)性，但是(shi)粗(cu)(cu)銅(tong)線要(yao)求頂(ding)層(ceng)(ceng)金(jin)屬(shu)化(hua)整體(ti)更加牢固，以防止功率(lv)(lv)半(ban)(ban)導(dao)體(ti)在(zai)(zai)粘合焊盤的(de)(de)(de)(de)(de)作(zuo)用(yong)(yong)(yong)下出(chu)現(xian)芯(xin)片裂紋和(he)(he)(he)結(jie)構損(sun)壞(huai)。很多功率(lv)(lv)半(ban)(ban)導(dao)體(ti)制(zhi)造廠(chang)正在(zai)(zai)著手解決這(zhe)(zhe)一(yi)問(wen)題。本(ben)文提(ti)出(chu)的(de)(de)(de)(de)(de)連接(jie)方(fang)(fang)法的(de)(de)(de)(de)(de)主要(yao)優勢之(zhi)一(yi)是(shi)這(zhe)(zhe)種方(fang)(fang)法可使(shi)用(yong)(yong)(yong)粗(cu)(cu)銅(tong)線綁(bang)定(ding)，無需改變半(ban)(ban)導(dao)體(ti)頂(ding)層(ceng)(ceng)金(jin)屬(shu)化(hua)。因此，半(ban)(ban)導(dao)體(ti)制(zhi)造廠(chang)可依靠現(xian)有(you)的(de)(de)(de)(de)(de)工藝(yi)(yi)技(ji)(ji)術和(he)(he)(he)既定(ding)的(de)(de)(de)(de)(de)金(jin)屬(shu)化(hua)，在(zai)(zai)前端和(he)(he)(he)后端／封裝材料(liao)之(zhi)間留出(chu)分(fen)隔線。于(yu)(yu)是(shi)，高(gao)可靠性功率(lv)(lv)模塊完全有(you)可能實(shi)現(xian)較快的(de)(de)(de)(de)(de)上市時間。銀燒結(jie)是(shi)一(yi)種成熟的(de)(de)(de)(de)(de)功率(lv)(lv)半(ban)(ban)導(dao)體(ti)焊接(jie)和(he)(he)(he)連接(jie)技(ji)(ji)術，｜｜J靠性很高(gao)，要(yao)求使(shi)用(yong)(yong)(yong)常(chang)見(jian)的(de)(de)(de)(de)(de)金(jin)屬(shu)化(hua)表(biao)面(mian)(mian)。例如NiAu、Pd或Ag，這(zhe)(zhe)些表(biao)面(mian)(mian)都(dou)很常(chang)用(yong)(yong)(yong)，大(da)多數(shu)制(zhi)造廠(chang)有(you)售。

2綁定和焊接技術

2．1低(di)壓(ya)燒(shao)結。低(di)壓(ya)燒(shao)結接(jie)受用(yong)于(yu)(yu)生產(chan)整流(liu)(liu)器(qi)功率(lv)(lv)模(mo)塊，采(cai)用(yong)這種技術，功率(lv)(lv)模(mo)塊質(zhi)量(liang)更好，熱(re)(re)工(gong)特性(xing)、機械(xie)特性(xing)和(he)電(dian)(dian)(dian)氣特性(xing)優(you)良。燒(shao)結時(shi)需要(yao)(yao)在焊接(jie)件之(zhi)間(jian)涂銀膏。燒(shao)結過(guo)程(cheng)中，施加(jia)壓(ya)力(li)(li)(li)產(chan)生一層(ceng)密實的(de)(de)(de)(de)(de)銀層(ceng)，連(lian)接(jie)可(ke)(ke)(ke)靠。燒(shao)結過(guo)程(cheng)中，當銀膏中的(de)(de)(de)(de)(de)銀顆(ke)粒和(he)有(you)機物促使擴散力(li)(li)(li)增(zeng)加(jia)時(shi)，可(ke)(ke)(ke)減(jian)小施加(jia)的(de)(de)(de)(de)(de)壓(ya)力(li)(li)(li)。據報道，當前的(de)(de)(de)(de)(de)燒(shao)結工(gong)藝可(ke)(ke)(ke)在40MPa以下的(de)(de)(de)(de)(de)壓(ya)力(li)(li)(li)水平完成(cheng)(cheng)｜6im。減(jian)小壓(ya)力(li)(li)(li)可(ke)(ke)(ke)生產(chan)不同規格(ge)的(de)(de)(de)(de)(de)模(mo)塊，從而(er)增(zeng)加(jia)設計靈(ling)活性(xing)，便于(yu)(yu)利用(yong)批量(liang)生產(chan)技術。2．2粗銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)。銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)是電(dian)(dian)(dian)力(li)(li)(li)電(dian)(dian)(dian)子(zi)產(chan)品(pin)總成(cheng)(cheng)的(de)(de)(de)(de)(de)大電(dian)(dian)(dian)流(liu)(liu)互連(lian)最看好的(de)(de)(de)(de)(de)技術之(zhi)一。與(yu)鋁(lv)線綁定(ding)(ding)(ding)(ding)相(xiang)比(bi)(bi)(bi)，銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)布局靈(ling)活性(xing)高、質(zhi)量(liang)過(guo)程(cheng)成(cheng)(cheng)熟，正(zheng)因為這兩條(tiao)原因，加(jia)快了(le)銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)的(de)(de)(de)(de)(de)研(yan)發。與(yu)鋁(lv)材相(xiang)比(bi)(bi)(bi)，電(dian)(dian)(dian)線粘(zhan)合(he)(he)互連(lian)采(cai)用(yong)銅(tong)(tong)質(zhi)材料，有(you)兩大好處：（1）電(dian)(dian)(dian)流(liu)(liu)能力(li)(li)(li)增(zeng)加(jia)37％：（2）銅(tong)(tong)的(de)(de)(de)(de)(de)熱(re)(re)傳導(dao)率(lv)(lv)好（比(bi)(bi)(bi)鋁(lv)的(de)(de)(de)(de)(de)熱(re)(re)傳導(dao)率(lv)(lv)高達(da)80％）。2．3丹佛(fo)斯(si)粘(zhan)合(he)(he)緩(huan)沖板(ban)技術（DBB）。丹佛(fo)斯(si)粘(zhan)合(he)(he)緩(huan)沖板(ban)技術（DBB）由燒(shao)結在金(jin)屬半導(dao)體頂層(ceng)金(jin)屬化(hua)表面(mian)(mian)上的(de)(de)(de)(de)(de)薄銅(tong)(tong)箔組成(cheng)(cheng)，如圖1所示(shi)。此外(wai)，替換(huan)半導(dao)體底面(mian)(mian)接(jie)口與(yu)DBC基體的(de)(de)(de)(de)(de)凸點(dian)瓦連(lian)時(shi)，也可(ke)(ke)(ke)采(cai)用(yong)相(xiang)同的(de)(de)(de)(de)(de)燒(shao)結技術。圖1燒(shao)結DBB銀和(he)銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)熱(re)(re)堆棧的(de)(de)(de)(de)(de)橫截面(mian)(mian)設計DBB吋，其(qi)尺(chi)寸要(yao)(yao)保(bao)證熱(re)(re)機械(xie)優(you)化(hua)，以減(jian)小由于(yu)(yu)CTE不匹配而(er)引(yin)起的(de)(de)(de)(de)(de)機械(xie)應力(li)(li)(li)。除了(le)銅(tong)(tong)線綁定(ding)(ding)(ding)(ding)期間(jian)可(ke)(ke)(ke)吸(xi)收能量(liang)和(he)保(bao)護晶片的(de)(de)(de)(de)(de)特性(xing)外(wai)，DBB還具有(you)很(hen)多熱(re)(re)特性(xing)和(he)電(dian)(dian)(dian)氣特性(xing)優(you)勢。采(cai)用(yong)DBB后，半導(dao)體內(nei)出現均勻的(de)(de)(de)(de)(de)電(dian)(dian)(dian)流(liu)(liu)密度(du)分配。由于(yu)(yu)豎向(xiang)電(dian)(dian)(dian)流(liu)(liu)流(liu)(liu)動得到改善，無需在半導(dao)體上采(cai)用(yong)針腳式粘(zhan)合(he)(he)。此部(bu)分將進一步(bu)介紹標準(zhun)整流(liu)(liu)器(qi)模(mo)塊和(he)第2部(bu)分所述方法制成(cheng)(cheng)的(de)(de)(de)(de)(de)相(xiang)同模(mo)塊之(zhi)間(jian)的(de)(de)(de)(de)(de)直(zhi)接(jie)比(bi)(bi)(bi)較(jiao)結果。

3結果

3．1熱(re)(re)模(mo)(mo)(mo)擬(ni)。為(wei)了證明新封裝技術(shu)的(de)(de)性能(neng)，我們使用熱(re)(re)模(mo)(mo)(mo)擬(ni)軟件FlowEFD，對(dui)不(bu)同的(de)(de)設(she)計(ji)方案進(jin)行了研宄(gui)。為(wei)了便于(yu)對(dui)結(jie)果(guo)進(jin)行比(bi)較，所(suo)有(you)(you)(you)方案都(dou)采用相同的(de)(de)條件。圖(tu)2顯示的(de)(de)是FEM模(mo)(mo)(mo)擬(ni)的(de)(de)邊(bian)界條件。圖(tu)2第(di)一糢擬(ni)部分和第(di)二糢擬(ni)部分的(de)(de)邊(bian)界條件DBB的(de)(de)附加熱(re)(re)能(neng)力對(dui)Zth曲線有(you)(you)(you)積極(ji)影響，W為(wei)它能(neng)儲存短熱(re)(re)能(neng)脈(mo)沖(chong)。圖(tu)3所(suo)示的(de)(de)是不(bu)同變型(xing)（VI？V5）不(bu)同時間（l〇ms、100ms、1000ms）的(de)(de)熱(re)(re)阻(zu)抗。在燒結(jie)的(de)(de)DBB變型(xing)（V5）中，10ms的(de)(de)Zth比(bi)標準(zhun)焊機技術(shu)（VI）低大于(yu)22％。另外，DBB的(de)(de)熱(re)(re)能(neng)力對(dui)Rth沒有(you)(you)(you)負面影響，因為(wei)它未(wei)在熱(re)(re)源（晶片）和熱(re)(re)沉之間的(de)(de)傳熱(re)(re)路徑上。3．2可靠(kao)性。從以前(qian)的(de)(de)標準(zhun)焊接(jie)模(mo)(mo)(mo)塊(kuai)(kuai)、燒結(jie)模(mo)(mo)(mo)塊(kuai)(kuai)和編織帶模(mo)(mo)(mo)塊(kuai)(kuai)試驗中得出(chu)比(bi)較數據(ju)W。功申循(xun)(xun)環結(jie)果(guo)如閣(ge)4所(suo)示。丹(dan)佛斯標準(zhun)整流器模(mo)(mo)(mo)塊(kuai)(kuai)約有(you)(you)(you)40000個循(xun)(xun)環，而(er)采川鋁線的(de)(de)燒結(jie)模(mo)(mo)(mo)塊(kuai)(kuai)約有(you)(you)(you)70000個循(xun)(xun)環。DBB模(mo)(mo)(mo)塊(kuai)(kuai)至少(shao)有(you)(you)(you)600000個循(xun)(xun)環，比(bi)丹(dan)佛斯標準(zhun)模(mo)(mo)(mo)塊(kuai)(kuai)好(hao)約15倍，比(bi)行業標準(zhun)好(hao)約60倍mi。

摘要本文重點(dian)對半(ban)(ban)導(dao)體硅材(cai)料(liao)(liao)，GaAs和InP單(dan)晶材(cai)料(liao)(liao)，半(ban)(ban)導(dao)體超晶格、量(liang)(liang)(liang)子阱材(cai)料(liao)(liao)，一維量(liang)(liang)(liang)子線、零維量(liang)(liang)(liang)子點(dian)半(ban)(ban)導(dao)體微(wei)結構材(cai)料(liao)(liao)，寬帶隙半(ban)(ban)導(dao)體材(cai)料(liao)(liao)，光子晶體材(cai)料(liao)(liao)，量(liang)(liang)(liang)子比特構建與材(cai)料(liao)(liao)等目前達到的(de)水平和器件(jian)應用(yong)概況及其發展(zhan)趨勢作(zuo)了(le)概述。最后(hou)，提出了(le)發展(zhan)我國(guo)半(ban)(ban)導(dao)體材(cai)料(liao)(liao)的(de)建議。

關鍵詞半導(dao)體(ti)(ti)材料量子線量子點材料光子晶體(ti)(ti)

1半(ban)導體材料的戰略地(di)位(wei)

上(shang)世紀(ji)中葉，單(dan)晶(jing)(jing)硅和半(ban)導(dao)體晶(jing)(jing)體管的(de)發(fa)明(ming)及(ji)其硅集(ji)成電(dian)路的(de)研制(zhi)(zhi)成功(gong)，導(dao)致了電(dian)子工業革命；上(shang)世紀(ji)70年代初石英光(guang)導(dao)纖(xian)維材料和GaAs激光(guang)器的(de)發(fa)明(ming)，促(cu)進(jin)了光(guang)纖(xian)通信(xin)(xin)技(ji)術(shu)迅速發(fa)展并逐(zhu)步形成了高(gao)新技(ji)術(shu)產業，使(shi)人類進(jin)入了信(xin)(xin)息時(shi)代。超(chao)(chao)晶(jing)(jing)格(ge)概念(nian)的(de)提出(chu)及(ji)其半(ban)導(dao)體超(chao)(chao)晶(jing)(jing)格(ge)、量子阱(jing)材料的(de)研制(zhi)(zhi)成功(gong)，徹底改(gai)變了光(guang)電(dian)器件的(de)設計(ji)思想，使(shi)半(ban)導(dao)體器件的(de)設計(ji)與(yu)制(zhi)(zhi)造從“雜質工程(cheng)(cheng)”發(fa)展到“能(neng)帶工程(cheng)(cheng)”。納(na)米(mi)科學技(ji)術(shu)的(de)發(fa)展和應用，將使(shi)人類能(neng)從原子、分子或納(na)米(mi)尺度水平上(shang)控(kong)制(zhi)(zhi)、操縱(zong)和制(zhi)(zhi)造功(gong)能(neng)強大(da)的(de)新型器件與(yu)電(dian)路，必(bi)將深(shen)刻(ke)地影響著世界的(de)政(zheng)治、經濟格(ge)局和軍事對抗(kang)的(de)形式，徹底改(gai)變人們的(de)生活方式。

2幾種主要半(ban)導體(ti)材料的發展現狀(zhuang)與(yu)趨勢

2.1硅材料

1半導體(ti)材料的戰略地位

上世紀(ji)中葉(xie)，單晶硅(gui)(gui)和(he)(he)(he)半(ban)(ban)導(dao)(dao)(dao)(dao)體(ti)晶體(ti)管的(de)(de)發明及其(qi)硅(gui)(gui)集成(cheng)(cheng)電路的(de)(de)研制(zhi)成(cheng)(cheng)功，導(dao)(dao)(dao)(dao)致了(le)(le)電子工(gong)業(ye)革命；上世紀(ji)70年代(dai)初石英光(guang)(guang)(guang)導(dao)(dao)(dao)(dao)纖維材料(liao)和(he)(he)(he)GaAs激光(guang)(guang)(guang)器(qi)的(de)(de)發明，促進(jin)了(le)(le)光(guang)(guang)(guang)纖通(tong)信技術迅速發展并逐(zhu)步(bu)形(xing)成(cheng)(cheng)了(le)(le)高新技術產業(ye)，使人類(lei)進(jin)入了(le)(le)信息時(shi)代(dai)。超晶格(ge)概(gai)念(nian)的(de)(de)提(ti)出及其(qi)半(ban)(ban)導(dao)(dao)(dao)(dao)體(ti)超晶格(ge)、量子阱材料(liao)的(de)(de)研制(zhi)成(cheng)(cheng)功，徹(che)底(di)改(gai)變了(le)(le)光(guang)(guang)(guang)電器(qi)件的(de)(de)設計(ji)思想，使半(ban)(ban)導(dao)(dao)(dao)(dao)體(ti)器(qi)件的(de)(de)設計(ji)與(yu)制(zhi)造(zao)從(cong)“雜質工(gong)程”發展到“能帶工(gong)程”。納米(mi)科學技術的(de)(de)發展和(he)(he)(he)應用(yong)，將使人類(lei)能從(cong)原子、分子或納米(mi)尺(chi)度水平上控(kong)制(zhi)、操縱(zong)和(he)(he)(he)制(zhi)造(zao)功能強大的(de)(de)新型器(qi)件與(yu)電路，必將深刻(ke)地(di)影響(xiang)著世界(jie)的(de)(de)政治、經濟格(ge)局和(he)(he)(he)軍事對抗的(de)(de)形(xing)式，徹(che)底(di)改(gai)變人們的(de)(de)生(sheng)活(huo)方式。

2幾種(zhong)主要半(ban)導體(ti)材料的發展現狀與趨勢

2.1硅材料

從提高硅集成(cheng)(cheng)(cheng)電路成(cheng)(cheng)(cheng)品率，降低成(cheng)(cheng)(cheng)本看，增大直(zhi)(zhi)(zhi)拉硅（CZ－Si）單(dan)(dan)晶(jing)的(de)(de)直(zhi)(zhi)(zhi)徑(jing)和減小(xiao)微缺(que)陷的(de)(de)密度仍是今后CZ－Si發(fa)展的(de)(de)總(zong)趨(qu)勢。目(mu)前直(zhi)(zhi)(zhi)徑(jing)為(wei)8英(ying)寸(cun)(cun)（200mm）的(de)(de)Si單(dan)(dan)晶(jing)已(yi)實現大規模工業(ye)(ye)生產(chan)，基于直(zhi)(zhi)(zhi)徑(jing)為(wei)12英(ying)寸(cun)(cun)（300mm）硅片(pian)的(de)(de)集成(cheng)(cheng)(cheng)電路（IC‘s）技術正處在(zai)由實驗(yan)室向工業(ye)(ye)生產(chan)轉(zhuan)變中。目(mu)前300mm，0.18μm工藝(yi)的(de)(de)硅ULSI生產(chan)線已(yi)經投入生產(chan)，300mm，0.13μm工藝(yi)生產(chan)線也將(jiang)在(zai)2003年完成(cheng)(cheng)(cheng)評估。18英(ying)寸(cun)(cun)重(zhong)達414公斤的(de)(de)硅單(dan)(dan)晶(jing)和18英(ying)寸(cun)(cun)的(de)(de)硅園(yuan)片(pian)已(yi)在(zai)實驗(yan)室研制成(cheng)(cheng)(cheng)功，直(zhi)(zhi)(zhi)徑(jing)27英(ying)寸(cun)(cun)硅單(dan)(dan)晶(jing)研制也正在(zai)積極籌劃中。

從(cong)進一(yi)步(bu)提高硅IC‘S的(de)速度(du)和(he)(he)集成(cheng)(cheng)度(du)看，研制(zhi)適合于(yu)硅深(shen)亞微米乃至納米工藝(yi)所需的(de)大(da)直徑硅外延片會成(cheng)(cheng)為硅材(cai)料(liao)發展的(de)主流。另外，SOI材(cai)料(liao)，包括智能剝離(li)（Smartcut）和(he)(he)SIMOX材(cai)料(liao)等也(ye)發展很快。目前，直徑8英寸的(de)硅外延片和(he)(he)SOI材(cai)料(liao)已研制(zhi)成(cheng)(cheng)功，更(geng)大(da)尺寸的(de)片材(cai)也(ye)在(zai)開(kai)發中。

摘要：本文(wen)通過分析電(dian)(dian)(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)(dian)(dian)子技(ji)(ji)術的(de)(de)發展(zhan)狀況，再結合電(dian)(dian)(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)(dian)(dian)子技(ji)(ji)術在我國電(dian)(dian)(dian)(dian)(dian)(dian)力(li)機車牽引電(dian)(dian)(dian)(dian)(dian)(dian)傳動系統中的(de)(de)應(ying)用情況，指出了寬禁(jin)帶半導體技(ji)(ji)術是今后從事電(dian)(dian)(dian)(dian)(dian)(dian)力(li)電(dian)(dian)(dian)(dian)(dian)(dian)子技(ji)(ji)術研究(jiu)的(de)(de)重要方(fang)向，并提出了繼續(xu)探究(jiu)優化改(gai)型(xing)IGBT和SiC功率器件在電(dian)(dian)(dian)(dian)(dian)(dian)力(li)機車上的(de)(de)應(ying)用研究(jiu)，對促進我國電(dian)(dian)(dian)(dian)(dian)(dian)力(li)機車的(de)(de)發展(zhan)具有重大意義(yi)。

關(guan)鍵詞:電力電子技術；電力機車(che)；牽引電傳動系統

隨著電(dian)力(li)(li)(li)電(dian)子技術(shu)的(de)快(kuai)速發展，電(dian)力(li)(li)(li)機車(che)牽(qian)引(yin)(yin)電(dian)傳(chuan)動(dong)(dong)系(xi)(xi)統(tong)(tong)發生(sheng)了巨(ju)大(da)的(de)變化。20世紀中(zhong)后(hou)期，采用(yong)(yong)交直(zhi)傳(chuan)動(dong)(dong)系(xi)(xi)統(tong)(tong)的(de)韶山型(xing)電(dian)力(li)(li)(li)機車(che)在(zai)(zai)我國鐵路交通運輸中(zhong)占主(zhu)導地位，但隨著現代科學與技術(shu)的(de)快(kuai)速發展，采用(yong)(yong)交直(zhi)交傳(chuan)動(dong)(dong)系(xi)(xi)統(tong)(tong)的(de)和諧系(xi)(xi)列電(dian)力(li)(li)(li)機車(che)，在(zai)(zai)生(sheng)產實際中(zhong)得到廣泛的(de)應用(yong)(yong)，并逐(zhu)漸(jian)取代了韶山型(xing)電(dian)力(li)(li)(li)機車(che)。在(zai)(zai)電(dian)力(li)(li)(li)機車(che)牽(qian)引(yin)(yin)電(dian)傳(chuan)動(dong)(dong)系(xi)(xi)統(tong)(tong)的(de)發展歷(li)程(cheng)中(zhong)，電(dian)力(li)(li)(li)電(dian)子技術(shu)承擔著舉(ju)足輕重的(de)作用(yong)(yong)，因此(ci)，電(dian)力(li)(li)(li)電(dian)子技術(shu)在(zai)(zai)電(dian)力(li)(li)(li)機車(che)牽(qian)引(yin)(yin)電(dian)傳(chuan)動(dong)(dong)系(xi)(xi)統(tong)(tong)中(zhong)的(de)應用(yong)(yong)研究具有(you)重要意義。

1電(dian)力電(dian)子技術的發展(zhan)

1947年(nian)(nian)，第一(yi)(yi)只晶體(ti)(ti)管(guan)的(de)(de)(de)(de)(de)(de)研(yan)(yan)(yan)制(zhi)成(cheng)功(gong)(gong)(gong)(gong)，開(kai)(kai)(kai)(kai)創了(le)(le)(le)(le)半(ban)(ban)導(dao)(dao)體(ti)(ti)固態電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)學，20世(shi)(shi)紀(ji)(ji)50年(nian)(nian)代(dai)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)半(ban)(ban)導(dao)(dao)體(ti)(ti)二(er)(er)極(ji)管(guan)的(de)(de)(de)(de)(de)(de)出(chu)現(xian)(xian)，提(ti)高(gao)(gao)(gao)(gao)了(le)(le)(le)(le)整(zheng)流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路的(de)(de)(de)(de)(de)(de)效(xiao)率(lv)(lv)(lv)(lv)。1957年(nian)(nian)美(mei)國(guo)(guo)(guo)通用(yong)(yong)(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)氣(qi)公司研(yan)(yan)(yan)制(zhi)出(chu)第一(yi)(yi)只可(ke)控(kong)(kong)(kong)(kong)(kong)型(xing)(xing)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)(jian)———晶閘(zha)(zha)(zha)管(guan)，次(ci)年(nian)(nian)得以(yi)(yi)(yi)商(shang)業(ye)化(hua)(hua)(hua)，標志著對(dui)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)能(neng)(neng)變(bian)換(huan)與控(kong)(kong)(kong)(kong)(kong)制(zhi)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)誕(dan)生(sheng)(sheng)。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)是一(yi)(yi)門(men)新(xin)型(xing)(xing)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)，但是發(fa)(fa)(fa)展(zhan)(zhan)(zhan)快速，其原因有(you)兩個：一(yi)(yi)是：人類(lei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)氣(qi)化(hua)(hua)(hua)時(shi)代(dai)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)能(neng)(neng)在(zai)(zai)國(guo)(guo)(guo)民工(gong)業(ye)中(zhong)的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)比重(zhong)(zhong)已(yi)成(cheng)為(wei)(wei)衡(heng)量一(yi)(yi)個國(guo)(guo)(guo)家(jia)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)水(shui)平的(de)(de)(de)(de)(de)(de)重(zhong)(zhong)要指標，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)適應(ying)(ying)(ying)(ying)(ying)(ying)了(le)(le)(le)(le)當(dang)今世(shi)(shi)界人們對(dui)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)能(neng)(neng)的(de)(de)(de)(de)(de)(de)巨(ju)大(da)(da)需求(qiu)以(yi)(yi)(yi)及(ji)能(neng)(neng)源(yuan)利用(yong)(yong)(yong)效(xiao)率(lv)(lv)(lv)(lv)的(de)(de)(de)(de)(de)(de)不(bu)斷(duan)(duan)(duan)追求(qiu)，利用(yong)(yong)(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)可(ke)以(yi)(yi)(yi)實現(xian)(xian)交(jiao)(jiao)流到(dao)(dao)(dao)(dao)直(zhi)(zhi)(zhi)流（AC/DC）、直(zhi)(zhi)(zhi)流到(dao)(dao)(dao)(dao)交(jiao)(jiao)流（DC/AC）、交(jiao)(jiao)流到(dao)(dao)(dao)(dao)交(jiao)(jiao)流（AC/AC）、直(zhi)(zhi)(zhi)流到(dao)(dao)(dao)(dao)直(zhi)(zhi)(zhi)流（DC/DC）等(deng)(deng)(deng)(deng)多(duo)形式(shi)的(de)(de)(de)(de)(de)(de)能(neng)(neng)量變(bian)換(huan)，這為(wei)(wei)太陽能(neng)(neng)、風能(neng)(neng)等(deng)(deng)(deng)(deng)清潔能(neng)(neng)源(yuan)的(de)(de)(de)(de)(de)(de)利用(yong)(yong)(yong)，高(gao)(gao)(gao)(gao)效(xiao)的(de)(de)(de)(de)(de)(de)交(jiao)(jiao)流傳(chuan)動，以(yi)(yi)(yi)及(ji)高(gao)(gao)(gao)(gao)壓(ya)直(zhi)(zhi)(zhi)流輸電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)等(deng)(deng)(deng)(deng)各領域的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)打(da)開(kai)(kai)(kai)(kai)了(le)(le)(le)(le)廣闊(kuo)的(de)(de)(de)(de)(de)(de)前(qian)景。二(er)(er)是：電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)(jian)的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)極(ji)大(da)(da)地(di)(di)擴展(zhan)(zhan)(zhan)了(le)(le)(le)(le)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)的(de)(de)(de)(de)(de)(de)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)范(fan)圍，微處(chu)理器(qi)(qi)(qi)的(de)(de)(de)(de)(de)(de)出(chu)現(xian)(xian)實現(xian)(xian)了(le)(le)(le)(le)控(kong)(kong)(kong)(kong)(kong)制(zhi)數(shu)字化(hua)(hua)(hua)，快速推進(jin)(jin)了(le)(le)(le)(le)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)。1.1傳(chuan)統電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)。晶閘(zha)(zha)(zha)管(guan)的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)明擴展(zhan)(zhan)(zhan)了(le)(le)(le)(le)半(ban)(ban)導(dao)(dao)體(ti)(ti)器(qi)(qi)(qi)件(jian)(jian)(jian)的(de)(de)(de)(de)(de)(de)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)控(kong)(kong)(kong)(kong)(kong)制(zhi)范(fan)圍，在(zai)(zai)二(er)(er)十世(shi)(shi)紀(ji)(ji)60年(nian)(nian)代(dai)得到(dao)(dao)(dao)(dao)快速推廣，主要應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)于大(da)(da)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)整(zheng)流器(qi)(qi)(qi)。二(er)(er)十世(shi)(shi)紀(ji)(ji)60年(nian)(nian)代(dai)普(pu)遍較大(da)(da)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)的(de)(de)(de)(de)(de)(de)工(gong)業(ye)用(yong)(yong)(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)由(you)工(gong)頻(pin)(pin)(pin)(pin)交(jiao)(jiao)流發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)機產(chan)(chan)生(sheng)(sheng)，其中(zhong)有(you)近20%的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)是給直(zhi)(zhi)(zhi)流用(yong)(yong)(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)負載(zai)(zai)(zai)使用(yong)(yong)(yong)，而大(da)(da)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)硅(gui)整(zheng)流器(qi)(qi)(qi)實現(xian)(xian)了(le)(le)(le)(le)將工(gong)頻(pin)(pin)(pin)(pin)交(jiao)(jiao)流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)轉換(huan)成(cheng)直(zhi)(zhi)(zhi)流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。晶閘(zha)(zha)(zha)管(guan)具(ju)(ju)有(you)體(ti)(ti)積(ji)小、功(gong)(gong)(gong)(gong)耗小、效(xiao)率(lv)(lv)(lv)(lv)高(gao)(gao)(gao)(gao)、可(ke)控(kong)(kong)(kong)(kong)(kong)等(deng)(deng)(deng)(deng)特點(dian)(dian)，用(yong)(yong)(yong)它構成(cheng)的(de)(de)(de)(de)(de)(de)變(bian)流裝置(zhi)具(ju)(ju)有(you)壽命長、易維護等(deng)(deng)(deng)(deng)優點(dian)(dian)。因此(ci)，晶閘(zha)(zha)(zha)管(guan)的(de)(de)(de)(de)(de)(de)開(kai)(kai)(kai)(kai)發(fa)(fa)(fa)與應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)在(zai)(zai)上(shang)世(shi)(shi)紀(ji)(ji)六(liu)、七(qi)十年(nian)(nian)代(dai)得到(dao)(dao)(dao)(dao)了(le)(le)(le)(le)快速發(fa)(fa)(fa)展(zhan)(zhan)(zhan)。由(you)于晶閘(zha)(zha)(zha)管(guan)的(de)(de)(de)(de)(de)(de)關(guan)斷(duan)(duan)(duan)不(bu)可(ke)控(kong)(kong)(kong)(kong)(kong)，需要依靠外加(jia)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路或外加(jia)反向電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)來(lai)實現(xian)(xian)關(guan)斷(duan)(duan)(duan)，這就限制(zhi)了(le)(le)(le)(le)晶閘(zha)(zha)(zha)管(guan)的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)。隨(sui)著科技(ji)(ji)(ji)(ji)(ji)的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)，多(duo)種多(duo)樣(yang)的(de)(de)(de)(de)(de)(de)負載(zai)(zai)(zai)不(bu)斷(duan)(duan)(duan)涌現(xian)(xian)，對(dui)需求(qiu)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)能(neng)(neng)提(ti)出(chu)了(le)(le)(le)(le)更高(gao)(gao)(gao)(gao)的(de)(de)(de)(de)(de)(de)要求(qiu)，在(zai)(zai)二(er)(er)十世(shi)(shi)紀(ji)(ji)70年(nian)(nian)代(dai)，全控(kong)(kong)(kong)(kong)(kong)型(xing)(xing)器(qi)(qi)(qi)件(jian)(jian)(jian)出(chu)現(xian)(xian)了(le)(le)(le)(le)，并(bing)逐漸占據主導(dao)(dao)地(di)(di)位(wei)，如快速晶閘(zha)(zha)(zha)管(guan)、門(men)極(ji)可(ke)關(guan)斷(duan)(duan)(duan)晶閘(zha)(zha)(zha)管(guan)。全控(kong)(kong)(kong)(kong)(kong)型(xing)(xing)器(qi)(qi)(qi)件(jian)(jian)(jian)具(ju)(ju)有(you)自(zi)身可(ke)關(guan)斷(duan)(duan)(duan)性(xing)能(neng)(neng)和(he)(he)較高(gao)(gao)(gao)(gao)開(kai)(kai)(kai)(kai)關(guan)速度(du)，在(zai)(zai)整(zheng)流、逆(ni)變(bian)、斬(zhan)波(bo)、變(bian)頻(pin)(pin)(pin)(pin)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路中(zhong)得到(dao)(dao)(dao)(dao)了(le)(le)(le)(le)廣泛應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)得到(dao)(dao)(dao)(dao)突飛猛進(jin)(jin)的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)。但是快速晶閘(zha)(zha)(zha)管(guan)、門(men)極(ji)可(ke)關(guan)斷(duan)(duan)(duan)晶閘(zha)(zha)(zha)管(guan)工(gong)作頻(pin)(pin)(pin)(pin)率(lv)(lv)(lv)(lv)不(bu)高(gao)(gao)(gao)(gao)，只能(neng)(neng)在(zai)(zai)中(zhong)低頻(pin)(pin)(pin)(pin)的(de)(de)(de)(de)(de)(de)范(fan)圍內應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)。1.2現(xian)(xian)代(dai)化(hua)(hua)(hua)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)。20世(shi)(shi)紀(ji)(ji)80年(nian)(nian)代(dai)初期，大(da)(da)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)絕緣柵雙(shuang)極(ji)晶體(ti)(ti)管(guan)（IGBT）的(de)(de)(de)(de)(de)(de)出(chu)現(xian)(xian)把電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)帶(dai)(dai)入(ru)高(gao)(gao)(gao)(gao)頻(pin)(pin)(pin)(pin)及(ji)中(zhong)大(da)(da)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)領域。IGBT具(ju)(ju)有(you)較高(gao)(gao)(gao)(gao)綜(zong)合性(xing)能(neng)(neng)，開(kai)(kai)(kai)(kai)關(guan)頻(pin)(pin)(pin)(pin)率(lv)(lv)(lv)(lv)方面(mian)(mian)，一(yi)(yi)般可(ke)達10kHz至20kHz，小功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)的(de)(de)(de)(de)(de)(de)甚至高(gao)(gao)(gao)(gao)達100kHz；電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)等(deng)(deng)(deng)(deng)級(ji)方面(mian)(mian)，最高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)已(yi)達到(dao)(dao)(dao)(dao)6500V，該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)下(xia)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流可(ke)達750A，1700V電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)等(deng)(deng)(deng)(deng)級(ji)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流可(ke)達2400A；溫度(du)方面(mian)(mian)，最高(gao)(gao)(gao)(gao)可(ke)達175℃。開(kai)(kai)(kai)(kai)關(guan)器(qi)(qi)(qi)件(jian)(jian)(jian)的(de)(de)(de)(de)(de)(de)高(gao)(gao)(gao)(gao)頻(pin)(pin)(pin)(pin)化(hua)(hua)(hua)也促進(jin)(jin)了(le)(le)(le)(le)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)感器(qi)(qi)(qi)件(jian)(jian)(jian)體(ti)(ti)積(ji)的(de)(de)(de)(de)(de)(de)成(cheng)倍縮小。大(da)(da)中(zhong)型(xing)(xing)功(gong)(gong)(gong)(gong)率(lv)(lv)(lv)(lv)高(gao)(gao)(gao)(gao)頻(pin)(pin)(pin)(pin)IGBT的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)持續促進(jin)(jin)著電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)設備朝輕(qing)重(zhong)(zhong)量、小體(ti)(ti)積(ji)、高(gao)(gao)(gao)(gao)效(xiao)能(neng)(neng)方面(mian)(mian)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)，再結合日益進(jin)(jin)步(bu)(bu)(bu)的(de)(de)(de)(de)(de)(de)微處(chu)理芯(xin)片技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)，現(xian)(xian)代(dai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)已(yi)實現(xian)(xian)了(le)(le)(le)(le)全控(kong)(kong)(kong)(kong)(kong)化(hua)(hua)(hua)、集成(cheng)化(hua)(hua)(hua)、高(gao)(gao)(gao)(gao)頻(pin)(pin)(pin)(pin)化(hua)(hua)(hua)、控(kong)(kong)(kong)(kong)(kong)制(zhi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)數(shu)字化(hua)(hua)(hua)和(he)(he)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路形式(shi)弱(ruo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)化(hua)(hua)(hua)，應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)場合越(yue)(yue)來(lai)越(yue)(yue)廣泛。由(you)于負載(zai)(zai)(zai)對(dui)供電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)能(neng)(neng)的(de)(de)(de)(de)(de)(de)質量要求(qiu)越(yue)(yue)來(lai)越(yue)(yue)高(gao)(gao)(gao)(gao)，科研(yan)(yan)(yan)工(gong)作者還(huan)在(zai)(zai)不(bu)斷(duan)(duan)(duan)進(jin)(jin)行IGBT改型(xing)(xing)研(yan)(yan)(yan)究。經過多(duo)年(nian)(nian)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)Si器(qi)(qi)(qi)件(jian)(jian)(jian)為(wei)(wei)基(ji)礎的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)相當(dang)成(cheng)熟，Si器(qi)(qi)(qi)件(jian)(jian)(jian)在(zai)(zai)開(kai)(kai)(kai)(kai)關(guan)頻(pin)(pin)(pin)(pin)率(lv)(lv)(lv)(lv)、通態壓(ya)降以(yi)(yi)(yi)及(ji)結溫等(deng)(deng)(deng)(deng)性(xing)能(neng)(neng)指標上(shang)難以(yi)(yi)(yi)繼續提(ti)升，發(fa)(fa)(fa)展(zhan)(zhan)(zhan)空間較小。新(xin)一(yi)(yi)代(dai)寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)材(cai)料(liao)（如碳化(hua)(hua)(hua)硅(gui)）的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)器(qi)(qi)(qi)件(jian)(jian)(jian)具(ju)(ju)有(you)比硅(gui)器(qi)(qi)(qi)件(jian)(jian)(jian)高(gao)(gao)(gao)(gao)得多(duo)的(de)(de)(de)(de)(de)(de)耐(nai)受高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)(de)(de)(de)能(neng)(neng)力(li)(li)(li)(li)(li)(li)(li)、低得多(duo)的(de)(de)(de)(de)(de)(de)通態電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻、更好的(de)(de)(de)(de)(de)(de)導(dao)(dao)熱性(xing)能(neng)(neng)和(he)(he)熱穩定性(xing)以(yi)(yi)(yi)及(ji)更強的(de)(de)(de)(de)(de)(de)耐(nai)受高(gao)(gao)(gao)(gao)溫和(he)(he)射線輻射的(de)(de)(de)(de)(de)(de)能(neng)(neng)力(li)(li)(li)(li)(li)(li)(li)等(deng)(deng)(deng)(deng)。當(dang)前(qian)寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)器(qi)(qi)(qi)件(jian)(jian)(jian)的(de)(de)(de)(de)(de)(de)發(fa)(fa)(fa)展(zhan)(zhan)(zhan)一(yi)(yi)直(zhi)(zhi)(zhi)受制(zhi)于材(cai)料(liao)的(de)(de)(de)(de)(de)(de)提(ti)煉、制(zhi)造以(yi)(yi)(yi)及(ji)半(ban)(ban)導(dao)(dao)體(ti)(ti)的(de)(de)(de)(de)(de)(de)制(zhi)造工(gong)藝水(shui)平，尚處(chu)于起步(bu)(bu)(bu)階(jie)段(duan)。目前(qian)，我國(guo)(guo)(guo)在(zai)(zai)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)方面(mian)(mian)也進(jin)(jin)行了(le)(le)(le)(le)初步(bu)(bu)(bu)的(de)(de)(de)(de)(de)(de)研(yan)(yan)(yan)究。寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)在(zai)(zai)照明中(zhong)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)已(yi)形成(cheng)一(yi)(yi)定規模(mo)，2017年(nian)(nian)我國(guo)(guo)(guo)氮化(hua)(hua)(hua)物(wu)半(ban)(ban)導(dao)(dao)體(ti)(ti)照明產(chan)(chan)業(ye)的(de)(de)(de)(de)(de)(de)產(chan)(chan)值突飛猛進(jin)(jin)，突破了(le)(le)(le)(le)5000億。同(tong)時(shi)，微波(bo)毫米波(bo)器(qi)(qi)(qi)件(jian)(jian)(jian)已(yi)開(kai)(kai)(kai)(kai)始應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)于通訊、衛星(xing)通信、對(dui)抗(kang)、雷達等(deng)(deng)(deng)(deng)領域。未(wei)來(lai)，寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)將在(zai)(zai)新(xin)能(neng)(neng)源(yuan)汽車、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)轉換(huan)等(deng)(deng)(deng)(deng)行業(ye)有(you)著越(yue)(yue)來(lai)越(yue)(yue)廣泛的(de)(de)(de)(de)(de)(de)應(ying)(ying)(ying)(ying)(ying)(ying)用(yong)(yong)(yong)。由(you)此(ci)可(ke)見，寬(kuan)(kuan)禁(jin)(jin)帶(dai)(dai)半(ban)(ban)導(dao)(dao)體(ti)(ti)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)是我們從事電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)(li)(li)(li)(li)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)(zi)(zi)技(ji)(ji)(ji)(ji)(ji)術(shu)(shu)(shu)(shu)(shu)(shu)(shu)研(yan)(yan)(yan)究的(de)(de)(de)(de)(de)(de)一(yi)(yi)個重(zhong)(zhong)要方面(mian)(mian)。

2電(dian)力電(dian)子技術在我國(guo)電(dian)力機車牽引電(dian)傳動系(xi)統中的應(ying)用(yong)

摘(zhai)要本文重點對半(ban)導體(ti)(ti)硅(gui)材(cai)(cai)料(liao)，GaAs和InP單晶(jing)(jing)材(cai)(cai)料(liao)，半(ban)導體(ti)(ti)超(chao)晶(jing)(jing)格、量(liang)子阱材(cai)(cai)料(liao)，一維(wei)量(liang)子線、零維(wei)量(liang)子點半(ban)導體(ti)(ti)微結構材(cai)(cai)料(liao)，寬帶隙半(ban)導體(ti)(ti)材(cai)(cai)料(liao)，光(guang)子晶(jing)(jing)體(ti)(ti)材(cai)(cai)料(liao)，量(liang)子比特構建與材(cai)(cai)料(liao)等目前達到的水平(ping)和器件(jian)應用概(gai)況及其發展趨勢作了(le)概(gai)述。最后，提出了(le)發展我國半(ban)導體(ti)(ti)材(cai)(cai)料(liao)的建議。

關(guan)鍵(jian)詞(ci)半導體材(cai)料(liao)(liao)量(liang)子線量(liang)子點材(cai)料(liao)(liao)光子晶體

1半導體材料的戰(zhan)略地(di)位

上世(shi)(shi)紀(ji)中葉(xie)，單晶(jing)硅和(he)半(ban)(ban)導(dao)體(ti)晶(jing)體(ti)管的(de)(de)(de)(de)發(fa)(fa)明(ming)及其(qi)硅集成(cheng)電路(lu)的(de)(de)(de)(de)研(yan)制(zhi)(zhi)成(cheng)功，導(dao)致(zhi)了(le)(le)電子(zi)工(gong)業(ye)革命；上世(shi)(shi)紀(ji)70年代初石英光(guang)(guang)導(dao)纖維材料和(he)GaAs激光(guang)(guang)器的(de)(de)(de)(de)發(fa)(fa)明(ming)，促進了(le)(le)光(guang)(guang)纖通(tong)信技術(shu)迅速發(fa)(fa)展并逐步(bu)形(xing)成(cheng)了(le)(le)高(gao)新技術(shu)產業(ye)，使人類進入了(le)(le)信息時代。超晶(jing)格概念的(de)(de)(de)(de)提出(chu)及其(qi)半(ban)(ban)導(dao)體(ti)超晶(jing)格、量子(zi)阱材料的(de)(de)(de)(de)研(yan)制(zhi)(zhi)成(cheng)功，徹底改變了(le)(le)光(guang)(guang)電器件的(de)(de)(de)(de)設計思想，使半(ban)(ban)導(dao)體(ti)器件的(de)(de)(de)(de)設計與(yu)(yu)制(zhi)(zhi)造從“雜(za)質工(gong)程”發(fa)(fa)展到(dao)“能(neng)帶工(gong)程”。納米(mi)科學技術(shu)的(de)(de)(de)(de)發(fa)(fa)展和(he)應用，將(jiang)(jiang)使人類能(neng)從原子(zi)、分子(zi)或納米(mi)尺度水(shui)平上控制(zhi)(zhi)、操縱和(he)制(zhi)(zhi)造功能(neng)強(qiang)大的(de)(de)(de)(de)新型(xing)器件與(yu)(yu)電路(lu)，必將(jiang)(jiang)深刻地影響著世(shi)(shi)界的(de)(de)(de)(de)政治(zhi)、經濟(ji)格局(ju)和(he)軍事對抗(kang)的(de)(de)(de)(de)形(xing)式(shi)，徹底改變人們的(de)(de)(de)(de)生活方(fang)式(shi)。

2幾種(zhong)主要(yao)半導體材料(liao)的發展現狀(zhuang)與趨勢

2.1硅材料

摘要本文重點對半(ban)導體(ti)(ti)硅材(cai)料，GaAs和(he)InP單晶材(cai)料，半(ban)導體(ti)(ti)超(chao)晶格、量(liang)(liang)子阱材(cai)料，一維(wei)量(liang)(liang)子線、零維(wei)量(liang)(liang)子點半(ban)導體(ti)(ti)微結構材(cai)料，寬帶隙半(ban)導體(ti)(ti)材(cai)料，光子晶體(ti)(ti)材(cai)料，量(liang)(liang)子比特構建(jian)與材(cai)料等目(mu)前達到(dao)的(de)水平(ping)和(he)器件應用概(gai)況及其發展(zhan)趨勢(shi)作了(le)(le)概(gai)述。最后，提(ti)出(chu)了(le)(le)發展(zhan)我國半(ban)導體(ti)(ti)材(cai)料的(de)建(jian)議。

關(guan)鍵詞半導體(ti)材(cai)料(liao)量子(zi)線量子(zi)點(dian)材(cai)料(liao)光子(zi)晶體(ti)

1半導(dao)體(ti)材料(liao)的戰略(lve)地位

上世紀中葉，單晶硅和半(ban)導(dao)體(ti)(ti)晶體(ti)(ti)管的(de)發(fa)明及其硅集(ji)成電路的(de)研制(zhi)成功，導(dao)致了電子工(gong)業(ye)(ye)革命；上世紀70年代初石英光導(dao)纖(xian)維材(cai)料和GaAs激光器(qi)的(de)發(fa)明，促進了光纖(xian)通信(xin)技術(shu)(shu)迅(xun)速發(fa)展并逐步形(xing)成了高新(xin)技術(shu)(shu)產業(ye)(ye)，使人類進入了信(xin)息(xi)時代。超(chao)晶格(ge)概念的(de)提出及其半(ban)導(dao)體(ti)(ti)超(chao)晶格(ge)、量子阱材(cai)料的(de)研制(zhi)成功，徹底改變了光電器(qi)件的(de)設(she)計(ji)思想(xiang)，使半(ban)導(dao)體(ti)(ti)器(qi)件的(de)設(she)計(ji)與制(zhi)造從“雜質工(gong)程”發(fa)展到(dao)“能(neng)帶工(gong)程”。納(na)米科(ke)學技術(shu)(shu)的(de)發(fa)展和應用，將使人類能(neng)從原子、分子或納(na)米尺度水平上控制(zhi)、操(cao)縱和制(zhi)造功能(neng)強大的(de)新(xin)型器(qi)件與電路，必將深刻地(di)影響著世界的(de)政(zheng)治、經濟格(ge)局和軍(jun)事對抗的(de)形(xing)式(shi)(shi)，徹底改變人們的(de)生(sheng)活(huo)方式(shi)(shi)。

2幾(ji)種主(zhu)要半導體(ti)材料的(de)發(fa)展現狀與趨勢

2.1硅材料

摘要本文重(zhong)點對半(ban)(ban)(ban)導(dao)體硅材料(liao)，GaAs和InP單晶(jing)材料(liao)，半(ban)(ban)(ban)導(dao)體超(chao)晶(jing)格、量(liang)子阱(jing)材料(liao)，一(yi)維(wei)量(liang)子線、零維(wei)量(liang)子點半(ban)(ban)(ban)導(dao)體微結構材料(liao)，寬帶隙半(ban)(ban)(ban)導(dao)體材料(liao)，光子晶(jing)體材料(liao)，量(liang)子比特構建(jian)與(yu)材料(liao)等目前達(da)到(dao)的水(shui)平和器件應用概(gai)(gai)況及其發展(zhan)趨(qu)勢作了概(gai)(gai)述。最后，提(ti)出了發展(zhan)我國半(ban)(ban)(ban)導(dao)體材料(liao)的建(jian)議(yi)。

關鍵詞半(ban)導體(ti)材(cai)(cai)料(liao)量子線(xian)量子點(dian)材(cai)(cai)料(liao)光子晶體(ti)

1半(ban)導體材料的(de)戰略地位

上(shang)世(shi)(shi)紀中葉(xie)，單晶硅和(he)半(ban)導(dao)(dao)體(ti)(ti)晶體(ti)(ti)管的(de)(de)發(fa)(fa)明及其硅集成(cheng)(cheng)電(dian)(dian)路(lu)的(de)(de)研制成(cheng)(cheng)功，導(dao)(dao)致了(le)電(dian)(dian)子(zi)(zi)(zi)工(gong)業革命；上(shang)世(shi)(shi)紀70年代初(chu)石英光導(dao)(dao)纖維材料(liao)和(he)GaAs激光器(qi)(qi)的(de)(de)發(fa)(fa)明，促進了(le)光纖通信(xin)技(ji)術(shu)迅速發(fa)(fa)展(zhan)并逐步形成(cheng)(cheng)了(le)高新(xin)技(ji)術(shu)產業，使人類(lei)進入了(le)信(xin)息(xi)時代。超(chao)晶格(ge)概(gai)念的(de)(de)提出及其半(ban)導(dao)(dao)體(ti)(ti)超(chao)晶格(ge)、量(liang)子(zi)(zi)(zi)阱材料(liao)的(de)(de)研制成(cheng)(cheng)功，徹底改(gai)變了(le)光電(dian)(dian)器(qi)(qi)件的(de)(de)設計思想，使半(ban)導(dao)(dao)體(ti)(ti)器(qi)(qi)件的(de)(de)設計與(yu)制造從“雜質工(gong)程(cheng)”發(fa)(fa)展(zhan)到“能帶工(gong)程(cheng)”。納米科學技(ji)術(shu)的(de)(de)發(fa)(fa)展(zhan)和(he)應用，將(jiang)使人類(lei)能從原子(zi)(zi)(zi)、分子(zi)(zi)(zi)或納米尺(chi)度水平上(shang)控制、操縱和(he)制造功能強大的(de)(de)新(xin)型器(qi)(qi)件與(yu)電(dian)(dian)路(lu)，必(bi)將(jiang)深刻地(di)影響著世(shi)(shi)界的(de)(de)政治、經(jing)濟格(ge)局和(he)軍事對抗的(de)(de)形式，徹底改(gai)變人們的(de)(de)生活方式。

2幾(ji)種主要半導體材料的發展現狀與趨勢

2.1硅材料

摘要本文重點對半導體(ti)硅材(cai)(cai)(cai)料，GaAs和(he)InP單晶(jing)材(cai)(cai)(cai)料，半導體(ti)超晶(jing)格、量子阱(jing)材(cai)(cai)(cai)料，一維量子線、零維量子點半導體(ti)微結(jie)構材(cai)(cai)(cai)料，寬帶隙半導體(ti)材(cai)(cai)(cai)料，光子晶(jing)體(ti)材(cai)(cai)(cai)料，量子比特(te)構建(jian)與材(cai)(cai)(cai)料等目(mu)前(qian)達到的(de)水(shui)平和(he)器件應用概況及其(qi)發(fa)展趨勢作了(le)概述(shu)。最后，提出(chu)了(le)發(fa)展我國半導體(ti)材(cai)(cai)(cai)料的(de)建(jian)議。

關鍵詞半導體材(cai)(cai)料量(liang)子(zi)線量(liang)子(zi)點材(cai)(cai)料光(guang)子(zi)晶體

1半導體材(cai)料的(de)戰略地位

上世(shi)紀中葉，單晶硅和(he)(he)(he)半導(dao)體晶體管(guan)的發(fa)明(ming)及其硅集成電路的研制成功，導(dao)致了(le)電子(zi)工業革(ge)命；上世(shi)紀70年代(dai)初石(shi)英光(guang)導(dao)纖維材料(liao)和(he)(he)(he)GaAs激(ji)光(guang)器的發(fa)明(ming)，促進了(le)光(guang)纖通信技(ji)(ji)術迅速(su)發(fa)展(zhan)(zhan)并逐步形成了(le)高(gao)新技(ji)(ji)術產業，使人類進入了(le)信息(xi)時代(dai)。超晶格(ge)概念的提出及其半導(dao)體超晶格(ge)、量(liang)子(zi)阱材料(liao)的研制成功，徹底改變(bian)了(le)光(guang)電器件的設計(ji)思(si)想，使半導(dao)體器件的設計(ji)與制造從(cong)“雜質工程”發(fa)展(zhan)(zhan)到“能(neng)帶工程”。納(na)米(mi)科學技(ji)(ji)術的發(fa)展(zhan)(zhan)和(he)(he)(he)應用(yong)，將使人類能(neng)從(cong)原子(zi)、分子(zi)或納(na)米(mi)尺度水平(ping)上控制、操縱和(he)(he)(he)制造功能(neng)強大的新型(xing)器件與電路，必將深刻地影響著世(shi)界的政治(zhi)、經濟格(ge)局和(he)(he)(he)軍事對抗(kang)的形式，徹底改變(bian)人們的生活方式。

2幾種主要半導(dao)體材料的發展現狀(zhuang)與(yu)趨(qu)勢

2.1硅材料

摘要本文重點對半導(dao)體(ti)(ti)硅材料(liao)，GaAs和InP單晶材料(liao)，半導(dao)體(ti)(ti)超晶格、量(liang)子阱材料(liao)，一(yi)維量(liang)子線(xian)、零維量(liang)子點半導(dao)體(ti)(ti)微結構材料(liao)，寬帶隙(xi)半導(dao)體(ti)(ti)材料(liao)，光子晶體(ti)(ti)材料(liao)，量(liang)子比特構建與材料(liao)等目(mu)前(qian)達(da)到的(de)水平(ping)和器(qi)件應用概況及(ji)其發展趨勢(shi)作(zuo)了概述。最后，提出了發展我國半導(dao)體(ti)(ti)材料(liao)的(de)建議。

關鍵詞半(ban)導體材料(liao)量(liang)子線(xian)量(liang)子點材料(liao)光子晶(jing)體

1半導體材料的(de)戰略地位

上世紀(ji)中葉，單晶硅和(he)(he)半導(dao)體(ti)(ti)晶體(ti)(ti)管的(de)(de)(de)發(fa)(fa)明(ming)及其硅集成(cheng)電(dian)路(lu)的(de)(de)(de)研制(zhi)(zhi)成(cheng)功(gong)，導(dao)致了電(dian)子(zi)工(gong)業(ye)(ye)革命；上世紀(ji)70年代(dai)初石英光(guang)導(dao)纖維(wei)材料和(he)(he)GaAs激光(guang)器(qi)的(de)(de)(de)發(fa)(fa)明(ming)，促進了光(guang)纖通信(xin)技術(shu)迅速發(fa)(fa)展(zhan)并逐(zhu)步形成(cheng)了高(gao)新(xin)技術(shu)產業(ye)(ye)，使(shi)人(ren)類進入了信(xin)息(xi)時代(dai)。超晶格概念的(de)(de)(de)提(ti)出(chu)及其半導(dao)體(ti)(ti)超晶格、量子(zi)阱(jing)材料的(de)(de)(de)研制(zhi)(zhi)成(cheng)功(gong)，徹底(di)改變了光(guang)電(dian)器(qi)件的(de)(de)(de)設計思想，使(shi)半導(dao)體(ti)(ti)器(qi)件的(de)(de)(de)設計與(yu)制(zhi)(zhi)造(zao)從(cong)“雜質(zhi)工(gong)程(cheng)”發(fa)(fa)展(zhan)到“能帶工(gong)程(cheng)”。納米科學技術(shu)的(de)(de)(de)發(fa)(fa)展(zhan)和(he)(he)應用，將(jiang)使(shi)人(ren)類能從(cong)原(yuan)子(zi)、分子(zi)或納米尺度(du)水平上控制(zhi)(zhi)、操縱和(he)(he)制(zhi)(zhi)造(zao)功(gong)能強大的(de)(de)(de)新(xin)型器(qi)件與(yu)電(dian)路(lu)，必將(jiang)深(shen)刻地影響著世界的(de)(de)(de)政治(zhi)、經(jing)濟(ji)格局和(he)(he)軍事對抗的(de)(de)(de)形式(shi)，徹底(di)改變人(ren)們的(de)(de)(de)生活方式(shi)。

2幾種主要(yao)半導體材(cai)料的發展現狀與趨勢

2.1硅材料